creat by art - low power loss, high efficiency - guardring for overvoltage protection - high surge current capability - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free base p/n with prefix "h" on packing code - aec-q101 qualified terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test, with prefix "h" on packing code meet jesd 201 class 2 whisker test v rrm 35 45 50 60 90 100 150 v v rms 24 31 35 42 63 70 105 v v dc 35 45 50 60 90 100 150 v i f(av) a i rrm a 0.95 0.92 1.02 0.98 0.1 5 dv/dt v/ s r jc o c/w t j o c t stg o c document number: ds_d1308040 version: j13 note 1: tp = 2.0 s, 1.0khz note 2: pulse test with pw=300 s, 1% duty cycle 1.0 0.5 7.5 0.2 typical thermal resistance 1.0 1.5 operating junction temperature range - 55 to +150 storage temperature range - 55 to +150 ma 15 10 voltage rate of change (rated v r ) 10000 maximum reverse current @ rated vr t j =25 t j =125 i r v 0.7 0.77 0.84 0.6 0.67 0.70 0.82 maximum instantaneous forward voltage (note 2) i f =15a, t j =25 i f =15a, t j =125 i f =30a, t j =25 i f =30a, t j =125 v f -0.94 0.73 - 0.82 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 200 a peak repetitive reverse surge current (note 1) symbol maximum dc blocking voltage maximum average forward rectified current 30 peak repetitive forward current (rated vr, square wave, 20khz) i frm 30 to-220ab mbr 30100 ct mbr 30150 ct unit maximum repetitive peak reverse voltage maximum rms voltage mounting torque: 5 in-lbs maximum weight: 1.9 g (approximately) maximum ratings and electrical characteristics (t a =25 unless otherwise noted) parameter mbr3035ct thru mbr30150ct taiwan semiconductor dual common cathode schottk y rectifier features mbr 3035 ct mbr 3045 ct mbr 3050 ct mbr 3060 ct mbr 3090 ct - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec mechanical data case: to-220ab polarity: as marked
part no. mbr30xxct part no. MBR3060CT MBR3060CT MBR3060CT (ta=25 unless otherwise noted) document number: ds_d1308040 version: j13 ratings and characteristics curves MBR3060CT c0g c0 g green compound MBR3060CThc0 h c0 aec-q101 qualified preferred p/n aec-q101 qualified packing code green compound code description MBR3060CT c0 c0 c0 suffix "g" to-220ab 50 / tube note 1: "xx" defines voltage from 35v (mbr3035ct) to 150v (mbr30150ct) example mbr3035ct thru mbr30150ct taiwan semiconductor ordering information aec-q101 qualified packing code green compound code package packing prefix "h" 0 5 10 15 20 25 30 35 0 50 100 150 average forward a current (a) case temperature ( o c) fig.1- forward current derating curve resistive or inductiveload with heatsink 0 50 100 150 200 250 300 1 10 100 peak forward surge c urrent (a) number of cycles at 60 hz fig. 2- maximum non-repetitive forward surge current per leg 8.3ms single half sine wave jedec method 0.001 0.01 0.1 1 10 100 0 20 40 60 80 100 120 140 instantaneous reverse current (ma) percent of rated peak reverse voltage (%) fig. 4- typical reverse characteristics per leg tj=125 tj=25 tj=75 mbr3035ct-mbr3045ct mbr3050ct-mbr30150ct 0.1 1 10 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 if-instantaneous forward current (a) forward voltage (v) fig. 3- typical instantaneous forward characteristics per leg mbr3035ct-mbr3045ct mbr3050ct-MBR3060CT mbr3090ct-mbr30100ct mbr30150ct
min max min max a - 10.50 - 0.413 b 2.62 3.44 0.103 0.135 c 2.80 4.20 0.110 0.165 d 0.68 0.94 0.027 0.037 e 3.54 4.00 0.139 0.157 f 14.60 16.00 0.575 0.630 g 13.19 14.79 0.519 0.582 h 2.41 2.67 0.095 0.105 i 4.42 4.76 0.174 0.187 j 1.14 1.40 0.045 0.055 k 5.84 6.86 0.230 0.270 l 2.20 2.80 0.087 0.110 m 0.35 0.64 0.014 0.025 p/n = marking code g = green compound yww = date code f = factory code document number: ds_d1308040 version: j13 marking diagram mbr3035ct thru mbr30150ct taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) 100 1000 10000 0.1 1 10 100 junction capacitance (pf) a reverse voltage (v) fig. 5- typical junction capacitance per leg f=1.0mhz vsig=50mvp-p mbr3035ct-mbr3045ct mbr3050ct-MBR3060CT mbr3090ct-mbr30150ct 0.1 1 10 100 0.01 0.1 1 10 100 transient thermal impedance ( /w) t-pulse duration. (sec) fig. 6- typical transient thermal impedance per leg
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